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| Microsemi 1KW RF E类发生器方案 | |||||
作者：Microsem… 文章来源：Microsemi 点击数： 更新时间：2008-3-25  |
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13.56 MHz, CLASS-E, 1KW RF Generator using a Microsemi DRF1200 Driver/MOSFET Hybrid CLASS-E amplifiers offer a degree of efficiency unavailable with linear designs. The trade-off has been the high level of design complexity that engineers have either shied away from or spent months discovering the fundamentals of practical CLASS-E amplifier design. With the DRF1200/CLASS-E reference design kit an engineer can rapidly overcome the pitfalls of high voltage CLASS-E design. It demonstrates fundamental design techniques that can save months of countless design iterations.  This application note discusses the design procedures and test results for a 13.56MHz, 1KW, CLASS-E generator ideal for ISM applications. To achieve high efficiency and low cost, a Microsemi DRF1200 Driver/MOSFET was selected. The DRF1200 can generate over 1KW of output power and consists of a MOSFET driver, high power MOSFET and internal bypass capacitors in an air cavity flangeless package. The flangeless package was designed to optimize reliability, provide increased flexibility while still providing a low cost solution. A reference design board (DRF1200/CLASS-E) is available for purchase to facilitate the immediate evaluation of the principles of this application note. To optimize efficiency performance, a CLASS-E RF generator was chosen. It is essential that care is taken to use adequate circuitry, clean PCB layout and good ground connections on the PCB to ensure proper output waveforms. The DRF1200 hybrid includes a high power gate driver and the power MOSFET. The driver output can be confi gured as Inverting and Non-Inverting. It was designed to provide the system designer increased fl exibility and lowered cost over a non-integrated solution. 主要特性： Switching Frequency: DC TO 30MHz Low Pulse Width Distortion Single Power Supply 1V CMOS Schmitt Trigger Input 1V Hysteresis Inverting Non-Inverting Select RoHS Compliant Switching Speed 3-4ns BVds = 1Kv Ids = 13A avg. Rds(on) ≤ 0.90 Ohm PD = 624W 典型应用： Class C, D and E RF Generators Switch Mode Power Amplifi ers Pulse Generators Ultrasound Transducer Drivers Acoustic Optical Modulators  图1. DRF1200 简化电路图  图2.DRF1200 测试电路图  图3.整体电路图  图4.PCB 布局 下表为1KW RF E类发生器所用元器件 
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